• DocumentCode
    2745518
  • Title

    High detectivity MWIR Type-II superlattice grown on a GaAs substrate

  • Author

    Hobbs, M.J. ; Das, S.D. ; Tan, C.H. ; David, J.P.R. ; Krishna, S. ; Rodriguez, J.B. ; Plis, E.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    Specific detectivity values of 1.0×1011, 2.8×109 and 5.8×108cmHz1/2/W were measured at 77, 200 and 290K, respectively, on a MWIR Type-II InAs/GaSb Superlattice photodiode grown on a GaAs substrate.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photodiodes; semiconductor superlattices; InAs-GaSb-GaAs; high detectivity MWIR; superlattice photodiode; temperature 200 K; temperature 290 K; temperature 77 K; type-II superlattice; Dark current; Detectors; Gallium arsenide; Photodiodes; Substrates; Superlattices; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110410
  • Filename
    6110410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2745518