• DocumentCode
    2745616
  • Title

    Ultrathin Silicon Nitride Capacitors Fabricated By In Situ Rapid Thermal Multi-processing For 256 Mb DRAM Cells

  • Author

    Yokozawa ; Ishitani, A.

  • Author_Institution
    NEC Corporation
  • fYear
    1993
  • fDate
    17-19 May 1993
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    In situ rapid thermal multi-processing (RTMP) technology is developed for Si3N4 capacitor film formation. Ultrathin Si3N4 films (36/spl Aring/) exhibit a low leakage current density (10nA/cm/sup 2/ at 1V) and markedly improved dielectric breakdown characteristics. The time to 50 % cumulative faidures for in situ RTMP capacitors is almost 10/sup 4/ times longer than that for conventional capacitors.
  • Keywords
    Capacitors; Films; Leakage currents; Random access memory; Silicon; Surface cleaning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1993.760238
  • Filename
    760238
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2745616