Title :
Study on the quantum efficiency enhancement in InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy
Author :
Nguyen, H.P.T. ; Cui, K. ; Zhang, S. ; Fathololoumi, S. ; Mi, Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
We report on the achievement of a record high internal quantum efficiency in InGaN/GaN dot-in-a-wire light emitting diodes by significantly reducing the electron overflow and enhancing the hole transport in the device active regions.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; wide band gap semiconductors; InGaN-GaN; dot-in-a-wire light emitting diodes; hole transport; internal quantum efficiency; molecular beam epitaxy; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; Light emitting diodes; Nanoscale devices; Quantum dots; Silicon;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110427
