Title :
A High-Speed Low Process Complexity Quarter-Micron BiCMOS Technology
Author :
Fukami, A. ; Onose, Y. ; Minami, M. ; Matsuzaki, N. ; Shoji, K. ; Watanabe, A. ; Nagano, T. ; Nishida, T. ; Tachibana, S.
Author_Institution :
Hitachi, Ltd.
Abstract :
A high-performance and producible quarter-micron BiCMOS technology is presented. The same p-type W- polycide is utilized for a CMOS gate and for a self- aligned bipolar base as well to minimize process complexity. For 2.5-V operation, base pre-charge BiNMOS gate circuit verifies the highest speed at any load condition.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; CMOS integrated circuits; CMOS technology; Delays; Logic gates; MOS devices;
Conference_Titel :
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
DOI :
10.1109/VLSIT.1993.760253
