• DocumentCode
    274599
  • Title

    Monolithic InP-based optical receiver front-end

  • Author

    Dawe, P.J.G. ; Spear, D.A.H. ; Lee, W.S. ; Antell, G.R. ; Bland, S.W.

  • Author_Institution
    STC Technol. Ltd., Harlow, UK
  • fYear
    1988
  • fDate
    11-15 Sep 1988
  • Firstpage
    21
  • Abstract
    Integrated receiver front-ends comprising photodiode, bias resistor, JFET and active load have been fabricated using an all MOVPE quasi-planar embedded process. Primary on-wafer measurements show a sensitivity of -29 dBm at 400 Mbit/s and 1.3 μm wavelength
  • Keywords
    III-V semiconductors; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical communication equipment; photodiodes; receivers; 1.3 micron; 400 Mbit/s; InP; MOVPE quasi-planar embedded process; active load; bias resistor; integrated receiver front-end; junction field effect transistor; monolithic integration; on-wafer measurements; photodiode; sensitivity;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    93661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274599