Title :
A Novel Low Resistance Salicide Technology (SWAN) For Quarter-micron CMOS
Author :
Matsubara, Y. ; Sekine, M. ; Nishio, N. ; Shinmura, T. ; Noguchi, K. ; Horiuchi, T. ; Yamada, Y. ; Kitano, T.
Author_Institution :
NEC Corporation
Abstract :
A low resistance salicide technology which includes a formation of Selective W on TiSi/sub 2/ and an ANnealing after W deposition (SWAN) has been proposed. A remarkable reduction in sheet resistance (down to 1/10) and thermal stability (up to 850"C) have been achieved for quamr-micron CMOS.
Keywords :
Annealing; Junctions; Silicon; Temperature; Thermal resistance; Thermal stability;
Conference_Titel :
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
DOI :
10.1109/VLSIT.1993.760266
