• DocumentCode
    2746185
  • Title

    Quantum dots-in-a-well (DWELL) infrared photodetectors with confinement enhancing barriers

  • Author

    Barve, A.V. ; Jun Oh Kim ; Sengupta, Sabyasachi ; Sharma, Yagya D. ; Jiayi Shao ; Adhikary, S. ; Rottera, Thomas ; Krishna, Sanjay

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    95
  • Lastpage
    96
  • Abstract
    Improvement in the performance of quantum dots-in-a-well (DWELL) detectors with confinement enhancing (CE) barriers is presented. Higher responsivity and lower noise, with detectivity of 6.5×1010 cm.Hz1/2W-1 (77K, 0.6V, 7.5μm, f/2) have been obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; quantum well devices; semiconductor device noise; semiconductor quantum dots; semiconductor quantum wells; AlGaAs; InGaAs; confinement enhancing barriers; detectivity; noise; quantum dots-in-a-well detector performance; quantum dots-in-a-well infrared photodetectors; responsivity; Dark current; Detectors; Energy states; Gallium arsenide; Noise; Quantum dots; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110442
  • Filename
    6110442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2746185