Unique dry film solution for Through Silicon Via Process

ldquoThrough Silicon Via (TSV) technology has gained a lot of attention lately as a packaging solution meeting the needs for higher device performance and lower cost of ownership. The semiconductor and packaging industry is looking for new technology and alternative materials to meet the goal of true 3D integration. One of the major challenges in implementing 3D packaging is the formation of high aspect ratio interconnects with sufficient via density and uniformity using an efficient process that results in low cost of ownership. This paper demonstrates a novel cost effective dry film photoresist process meeting the technology requirements in terms of via diameter, shape and geometry using resist formulations with high etch selectivity and plating performance for via filling. Further results are presented showing advantages of this photoresist process for TSV ldquovia protectionrdquo using the unique tenting capability of dry film.rdquo