DocumentCode
2746303
Title
Future Technology Driver: DRAM or High Speed Logic?
Author
Hwang, C.G. ; Abernathey
Author_Institution
Samsung Electronics
fYear
1993
fDate
17-19 May 1993
Firstpage
120
Lastpage
120
Abstract
Summary form only given. Scaling MOS devices has provided high performance,high density CMOS LSIs, such as memories and microprocessors, and scaling remains the key to obtaining better performance in the future. For over half a decade, researchers have been reporting results for MOSFETs with channel lengths down to 0.1 pm .
Keywords
MOS devices;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/VLSIT.1993.760277
Filename
760277
Link To Document