• DocumentCode
    2746303
  • Title

    Future Technology Driver: DRAM or High Speed Logic?

  • Author

    Hwang, C.G. ; Abernathey

  • Author_Institution
    Samsung Electronics
  • fYear
    1993
  • fDate
    17-19 May 1993
  • Firstpage
    120
  • Lastpage
    120
  • Abstract
    Summary form only given. Scaling MOS devices has provided high performance,high density CMOS LSIs, such as memories and microprocessors, and scaling remains the key to obtaining better performance in the future. For over half a decade, researchers have been reporting results for MOSFETs with channel lengths down to 0.1 pm .
  • Keywords
    MOS devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1993.760277
  • Filename
    760277