DocumentCode
2746314
Title
Quantum dot lasers - the role of the 2D states
Author
Smowton, P.M. ; Elliott, S.N. ; Krysa, A.B.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
107
Lastpage
108
Abstract
We explore how the 2-dimensional layers affect the quantum dot states and their carrier population and how these factors affect the threshold current temperature dependence in state-of-the-art InP quantum dot lasers.
Keywords
indium compounds; quantum dot lasers; 2-dimensional layers; InP; carrier population; quantum dot lasers; threshold current; Absorption; Energy measurement; Indium phosphide; Quantum dot lasers; Strain; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110448
Filename
6110448
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