DocumentCode :
2746314
Title :
Quantum dot lasers - the role of the 2D states
Author :
Smowton, P.M. ; Elliott, S.N. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
107
Lastpage :
108
Abstract :
We explore how the 2-dimensional layers affect the quantum dot states and their carrier population and how these factors affect the threshold current temperature dependence in state-of-the-art InP quantum dot lasers.
Keywords :
indium compounds; quantum dot lasers; 2-dimensional layers; InP; carrier population; quantum dot lasers; threshold current; Absorption; Energy measurement; Indium phosphide; Quantum dot lasers; Strain; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110448
Filename :
6110448
Link To Document :
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