• DocumentCode
    2746324
  • Title

    Direct characterization of carrier relaxation in a passively mode-locked quantum dot laser

  • Author

    Raghunathan, R. ; Crowley, M.T. ; Grillot, F. ; Kovanis, V. ; Lester, L.F.

  • Author_Institution
    Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    An approach to determine the carrier relaxation ratio for the gain and saturable absorber sections of a passively mode-locked quantum dot laser using measurable static laser parameters is presented.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical saturable absorption; quantum dot lasers; InAs-GaAs; carrier relaxation; gain; measurable static laser parameters; passively mode-locked quantum dot laser; saturable absorber; Current measurement; Gain measurement; Loss measurement; Quantum dot lasers; Semiconductor device measurement; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110449
  • Filename
    6110449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2746324