DocumentCode :
2746324
Title :
Direct characterization of carrier relaxation in a passively mode-locked quantum dot laser
Author :
Raghunathan, R. ; Crowley, M.T. ; Grillot, F. ; Kovanis, V. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
109
Lastpage :
110
Abstract :
An approach to determine the carrier relaxation ratio for the gain and saturable absorber sections of a passively mode-locked quantum dot laser using measurable static laser parameters is presented.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical saturable absorption; quantum dot lasers; InAs-GaAs; carrier relaxation; gain; measurable static laser parameters; passively mode-locked quantum dot laser; saturable absorber; Current measurement; Gain measurement; Loss measurement; Quantum dot lasers; Semiconductor device measurement; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110449
Filename :
6110449
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2746324
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