DocumentCode :
2746424
Title :
Characteristics of reactive magnetron sputtered ZnO films
Author :
Perluzzo, G. ; Jen, C.K. ; Adler, F.L.
Author_Institution :
Ind. Res. Inst., NRC, Boucherville, Que., Canada
fYear :
1989
fDate :
3-6 Oct 1989
Firstpage :
373
Abstract :
Highly oriented, dense, and fine-grain polycrystalline ZnO films with an excellent surface flatness have been produced. The thin films were deposited by DC conical reactive magnetron sputtering. X-ray scanning and scanning electron microscopy were used to evaluate film crystalline structure, and electromechanical measurements were used to measure piezoelectric properties. The relative importance of experimental parameters influencing the film formation and quality is as follows: substrate distance and location with respect to the cathode, quality of substrate surface, oxygen flow and pressure, plasma-discharge power, and substrate temperature. Excellent films have been produced on glass, on thermally oxidized Si substrates, and on clean metallic thin films. Films having c-axis orientation of up to 17° to the substrate normal have been successfully deposited on Al thin layers on Si-SiO2 substrates by varying the substrate position with respect to the plasma. The best films produced on (111) Si had X-ray rocking curve half-widths of 0.9°
Keywords :
piezoelectric devices; surface acoustic wave devices; (111) Si; DC conical reactive magnetron sputtering; O flow; O pressure; Si-SiO2 substrates; X-ray rocking curve half-widths; X-ray scanning; c-axis orientation; clean metallic thin films; electromechanical measurements; film crystalline structure; film formation; fine-grain polycrystalline ZnO films; piezoelectric properties; plasma-discharge power; reactive magnetron sputtered ZnO films; scanning electron microscopy; substrate distance; surface flatness; thermally oxidized Si substrates; Cathodes; Crystallization; Piezoelectric films; Plasma measurements; Plasma temperature; Scanning electron microscopy; Semiconductor films; Sputtering; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1989. Proceedings., IEEE 1989
Conference_Location :
Montreal, Que.
Type :
conf
DOI :
10.1109/ULTSYM.1989.67012
Filename :
67012
Link To Document :
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