مرکز منطقه ای اطلاع رساني علوم و فناوري - Double Trench Isolation (DTI): A Novel Isolation Technology For Deep-submicron Silicon Devices

DocumentCode :

2746446

Title :

Double Trench Isolation (DTI): A Novel Isolation Technology For Deep-submicron Silicon Devices

Author :

Park, T. ; Ahn, S.T. ; Kim, Y.C. ; Lee, J.K. ; Lee, M.Y. ; Lee, J.G.

Author_Institution :

Samsung Electronics Co. LTD.

fYear :

1993

fDate :

17-19 May 1993

Firstpage :

137

Lastpage :

138

fLanguage :

English

Publisher :

ieee

Conference_Titel :

VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on

Conference_Location :

Kyoto, Japan

Type :

conf

DOI :

10.1109/VLSIT.1993.760286

Filename :

760286

Link To Document :