DocumentCode
2746543
Title
Mechanical behavior of lead-free solder joints under high speed shear test at different pad metallization substrate
Author
Lin, C.Y. ; Chen, Y.R. ; Shen, G.S. ; Liu, D.S. ; Kuo, C.Y. ; Hsu, C.L.
Author_Institution
ChipMOS Technol. INC., Tainan
fYear
2008
fDate
22-24 Oct. 2008
Firstpage
120
Lastpage
123
Abstract
The most common cause of failure in portable electronic products is accidental drop. Therefore, the effect of impact on electronic package is very important. This study examines the mechanical behavior of lead-free solder joints under high speed shear. In this research we will set up the high rate ball shearing impact test, the maximum impact speed can up to 1.0 m/sec. The effects of differential solder alloy and pad metallization were also considered. Various Sn-Ag-Cu lead-free solder balls were investigated at room temperature and at a high speed shear rates of 1.0 m/s. Four failure modes were identified during the high speed shear test. In Mode M1, fractures occurred around the interface but not remain the solder on the pad. In Mode M2, fractures occurred around the interface and remain the solder on the pad. In Mode M3, fractures were noted across the solder ball. In Mode M4, fractures on the substrate lifted. The M3 failure rate of Ni/Au substrates increases over time. Meanwhile, M2 failure rate increases in shear tests of velocity increases from 0.3 up to 1.0 m/s. The M2 and M3 failures are the major failure modes in another kind of SAC solder alloy. However, for all shear test conditions, 100% of M3 is detected by using SnPb solder alloy. In the case of OSP, M2 is also the major failure mode for all shear test conditions. Comparing OSP with Ni/Au pad metallization substrate reveals that aging time does not significantly affect failure rate in shear test.
Keywords
copper alloys; fracture; impact testing; interface phenomena; metallisation; silver alloys; solders; tin alloys; SnAgCu; differential solder alloy; fracture; high rate ball shearing impact test; lead-free solder joints; mechanical behavior; pad metallization; room temperature; temperature 293 K to 298 K; Aging; Electronics packaging; Environmentally friendly manufacturing techniques; Gold; Lead; Metallization; Shearing; Soldering; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Materials and Packaging, 2008. EMAP 2008. International Conference on
Conference_Location
Taipei
Print_ISBN
978-1-4244-3620-0
Electronic_ISBN
978-1-4244-3621-7
Type
conf
DOI
10.1109/EMAP.2008.4784244
Filename
4784244
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