DocumentCode
2746612
Title
High-performance Marchand-type balun design and fabrication using an integrated passives device (IPD) technology
Author
Huang, Chien-Hsiang ; Wei, Tzu-Chiang ; Horng, Tzyy-Sheng ; Wu, Sung-Mao ; Wang, Chen-Chao ; Chiu, Chi-Tsung ; Hung, Chih-Pin
Author_Institution
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
fYear
2008
fDate
22-24 Oct. 2008
Firstpage
137
Lastpage
140
Abstract
The integrated passive device (IPD) technology was currently developed for high performance, small volume or size, low cost and multi-functional integration for wireless RF front-end applications. Especially wafer level packaging technologies offer an interesting variety of different possibilities for the implementation of integrated passive components. The IPD process is made by a low-cost manufacturing technology and a high-performance process technology of electro-chemically forming spin coating layer on glass wafer and processing thick-Cu interconnects and polyimide dielectrics. In this paper, an integrated Marchand-type balun for 2.45-GHz WLAN applications is presented and exhibit excellent measured performance with insertion loss of 1 dB. The measured amplitude balance and phase balance of 0.45 dB and 3 degree, and common mode rejection ratio of 28 dB were realized. Finally, EM simulation and experimental verification show very good agreement between simulated and measured results by validating IPD design process.
Keywords
UHF devices; baluns; coplanar waveguides; wafer level packaging; wireless LAN; EM simulation; WLAN applications; coplanar waveguide; copper interconnects; frequency 2.45 GHz; glass wafer; high-performance Marchand-type balun design; integrated passives device technology; loss 1 dB; low-cost manufacturing technology; multifunctional integration; polyimide dielectrics; wafer level packaging technology; wireless RF front-end applications; Coatings; Components, packaging, and manufacturing technology; Costs; Dielectric measurements; Fabrication; Glass manufacturing; Impedance matching; Manufacturing processes; Radio frequency; Wafer scale integration; Integrated Passive Device; Marchand Balun; spiral transmission line;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Materials and Packaging, 2008. EMAP 2008. International Conference on
Conference_Location
Taipei
Print_ISBN
978-1-4244-3620-0
Electronic_ISBN
978-1-4244-3621-7
Type
conf
DOI
10.1109/EMAP.2008.4784248
Filename
4784248
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