DocumentCode
2746754
Title
An Au/Pt/Ti/WNx ohmic contact to n-InGaAs and its application to AlGaAs/GaAs HBTs
Author
Park, Sung Ho ; Kim, Il-Ho ; Lee, Tae-Woo ; Park, Moon-Phung
Author_Institution
Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fYear
1997
fDate
8-11 Sep 1997
Firstpage
459
Lastpage
462
Abstract
We report the experiments that were performed to investigate the alloying temperature dependence of Au/Pt/Ti/WNx ohmic contacts to n-InGaAs. Very low resistance contacts (10-8~10 -7 Ωcm2) were obtained after RTA at the temperatures from 250 to 450°C. It was observed from XRD and AES analyses that there were no remarkable phase transformations for the contact system subjected to heat treatments. When Au/Pt/Ti/WNx ohmic contacts were applied to AlGaAs/GaAs HBTs, moderate DC and RF performances were also achieved. It is believed that these ohmic schemes can be used as stable and low resistance contacts for high temperature HBT applications
Keywords
Auger effect; III-V semiconductors; X-ray diffraction; aluminium compounds; contact resistance; gallium arsenide; heterojunction bipolar transistors; indium compounds; ohmic contacts; rapid thermal annealing; semiconductor device metallisation; 250 to 450 C; AES; AlGaAs-GaAs; AlGaAs/GaAs HBT; Au-Pt-Ti-WN; Au/Pt/Ti/WNx ohmic contact; DC performance; InGaAs; RF performance; RTA; XRD; alloying temperature dependence; contact resistance; heat treatment; high temperature HBT; n-InGaAs; phase transformation; Alloying; Contact resistance; Gallium arsenide; Gold; Heat treatment; Heterojunction bipolar transistors; Ohmic contacts; Radio frequency; Temperature dependence; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7503-0556-8
Type
conf
DOI
10.1109/ISCS.1998.711704
Filename
711704
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