Title :
Highly stacked quantum dot lasers fabricated by a strain-compensation technique
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawan, Tetsuya
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol. (NICT), Tokyo, Japan
Abstract :
We fabricated laser diodes containing highly stacked InAs quantum dots using a strain-compensation technique. The quantum dots exhibited laser emissions from 1.47 to 1.7 μm and a high characteristic temperature of 113 K.
Keywords :
III-V semiconductors; indium compounds; laser transitions; optical fabrication; quantum dot lasers; InAs; characteristic temperature; laser diodes; stacked quantum dot lasers; strain compensation; temperature 113 K; wavelength 1.47 mum to 1.7 mum; Current measurement; Laser modes; Measurement by laser beam; Quantum dot lasers; Temperature; Threshold current; molecular beam epitaxy; quantum dot; semiconductor laser; strain compensation;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110476
