Investigation of on-chip double-shieled QHR device in ac regime

Author

Kaneko, Nobu-hisa ; Schurr, Jürgen ; Ahlers, Franz J. ; Domae, Atsushi ; Oe, Takehiko ; Kiryu, Shogo

Author_Institution

AIST, Nat. Metrol. Inst. of Japan, Tsukuba, Japan

fYear

2012

fDate

1-6 July 2012

Firstpage

193

Lastpage

194

Abstract

For the investigation of ac performance, two on-chip double-shielded QHR devices and two double-shielded chip carriers were fabricated at National Metrology Institute of Japan and have been studied with ac at Physikalisch-Technische Bundesanstalt. It has been measured that the shape of the i = 2 plateaux at zero shield-potential is not flat and the linear frequency dependence of the quantum Hall resistance amounts to -0.14 (μΩ/Ω) /kHz. Deferent shield designs are proposed to reduce the frequency dependence.

Keywords

Hall effect devices; quantum Hall effect; AC regime performance; Japan; National Metrology Institute; Physikalisch-Technische Bundesanstalt; double-shielded chip carrier; linear frequency dependence; on-chip double-shieled QHR device; quantum Hall resistance; zero shield-potential; Electrical resistance measurement; Frequency dependence; Performance evaluation; Resistance; Semiconductor device measurement; Shape measurement; System-on-a-chip; QHR device; ac QHR; double-shielded configuration; quantized Hall resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2012 Conference on

Conference_Location

Washington, DC

ISSN

0589-1485

Print_ISBN

978-1-4673-0439-9

Type

conf

DOI

10.1109/CPEM.2012.6250867

Filename

6250867