• DocumentCode
    2747435
  • Title

    Finite element simulation of SMFBAR based sensor

  • Author

    Cheng, Chi-Jung ; Atashbar, Massood Zandi

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Western Michigan Univ., Kalamazoo, MI, USA
  • fYear
    2009
  • fDate
    7-9 June 2009
  • Firstpage
    190
  • Lastpage
    195
  • Abstract
    In this work, a three dimensional finite element model for solidly mounted film bulk acoustic resonator (SMFBAR) devices is developed and simulated. The simulation is performed using the CoventorWareTM platform to analyze the performance of the device. The influence of the shape of the top electrode and its thickness on the sensitivity SMFBAR based sensors was investigated. Two different electrode shapes (square and circle) with surface areas of 0.04 mm2 and 0.09 mm2 and different thicknesses varying from 50 nm to 350 nm with increments of 100 nm were investigated. The devices that were studied were ZnO based SMFBAR structures. The analysis revealed that both configurations have mass sensitivities with three orders of magnitude higher than that of quartz crystal microbalance sensing systems. These devices also exhibit high performance with maximum quality factor of 418 and effective electromechanical coupling coefficient of around 12.2%. Also, it was found out that the circular shaped top electrodes performance were slightly higher than that of square shaped one with respect to sensitivity, quality factor and effective electromechanical coupling.
  • Keywords
    acoustic resonators; finite element analysis; sensors; electrodes; electromechanical coupling coefficient; finite element simulation; quartz crystal microbalance sensing systems; solidly mounted film bulk acoustic resonator; Acoustic sensors; Analytical models; Electrodes; Film bulk acoustic resonators; Finite element methods; Performance analysis; Q factor; Shape; Solid modeling; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electro/Information Technology, 2009. eit '09. IEEE International Conference on
  • Conference_Location
    Windsor, ON
  • Print_ISBN
    978-1-4244-3354-4
  • Electronic_ISBN
    978-1-4244-3355-1
  • Type

    conf

  • DOI
    10.1109/EIT.2009.5189609
  • Filename
    5189609