Title :
Towards accurate charge transport with SINIS turnstile
Author :
Maisi, V.F. ; Saira, O. -P ; Kemppinen, A. ; Pashkin, Yu A. ; Averin, D.V. ; Manninen, A. ; Pekola, J.P.
Author_Institution :
Centre for Metrol. & Accreditation (MIKES), Espoo, Finland
Abstract :
We discuss the current quantization obtainable in SINIS turnstiles. Various error processes, for example environmentally assisted and higher order tunneling as well as quasiparticle exitations in superconducting leads, may limit the achievable quantization. We argue that by careful design of the device, relative uncertainty of less than 10-7, required by metrological applications, is feasible. We also present a scheme for error detection of the turnstiles.
Keywords :
electric variables measurement; measurement errors; measurement standards; measurement uncertainty; single electron transistors; transport processes; SINIS turnstile; accurate charge transport; error detection; error process; hybrid single electron transistor; metrological application; relative uncertainty; Accuracy; Logic gates; Metrology; Single electron transistors; Transistors; Tunneling; Voltage measurement; Measurement standards; metrology; nanoelectronics; quantum mechanics; single electron devices; single electron transistors;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4673-0439-9
DOI :
10.1109/CPEM.2012.6250895
