Photovoltaic Hg1-xCdxTe detectors for 12 μm application

Hg_1-xCd_xTe (MCT) is the most important material for infrared quantum detectors in the wavelength range of 8-12 μm. The authors have manufactured bilinear arrays of photovoltaic detectors for the 12 μm wavelength region using a planar diffusion technology on MCT epilayers grown on CdZnTe substrates. The diodes show large R_shunt and R₀A values, nearly zero low-frequency noise even below 10 Hz, and very homogeneous photocurrent and detectivity over the array, both at 77 and 65 K. The temperature dependence of D* and R₀A corresponds to the theoretically expected behaviour