Title :
Thermal characterization of the VBIC dielectrically isolated device
Author :
Hossain, Md M. ; Davis, W. Alan ; Russell, Howard T., Jr. ; Carter, Ronald L.
Author_Institution :
Dept. of Electr. & Comput. Eng., St. Cloud State Univ., St. Cloud, MN, USA
Abstract :
This paper presents thermal characterization of the dielectrically isolated bipolar junction transistor (DIBJT) with the vertical bipolar inter-company (VBIC) model. The VBIC model incorporates the thermal nodes of a transistor. Semiconductor devices are strongly influenced by the thermal effects. When the device is heated, it raises its local temperature which changes the device´s intrinsic parameters. This paper shows the behavior of collector current, base current, thermal transconductances, and junction temperature versus temperature. It also shows several other temperature characteristics of a VBIC DIBJT device.
Keywords :
bipolar transistors; semiconductor junctions; thermal analysis; DIBJT device intrinsic parameter; VBIC DIBJT device temperature characteristics; VBIC dielectrically isolated device; base current parameter; collector current parameter; dielectrically isolated bipolar junction transistor; thermal transconductance; vertical bipolar inter-company model; Analog integrated circuits; Current measurement; Dielectric devices; Heating; Semiconductor devices; Substrates; Temperature; Thermal conductivity; Thermal resistance; Voltage;
Conference_Titel :
Electro/Information Technology, 2009. eit '09. IEEE International Conference on
Conference_Location :
Windsor, ON
Print_ISBN :
978-1-4244-3354-4
Electronic_ISBN :
978-1-4244-3355-1
DOI :
10.1109/EIT.2009.5189615
