• DocumentCode
    274765
  • Title

    HgCdTe MIS photocapacitor detectors

  • Author

    Roberts, C.G.

  • fYear
    1990
  • fDate
    5-7 Jun 1990
  • Firstpage
    41
  • Lastpage
    47
  • Abstract
    The noise of 10 μm HgCdTe MIS detectors has been measured and compared with the integrating detector model. The detector is dominated by photon g-r noise in the measured range of f/1 to f/2.8 cold shielding. The noise has negligible 1/f component from 30 Hz to the sampling frequency. Thus, the detector shows excellent BLIP performance under these conditions. The quantum efficiency exceeds 50% and the responsivity is a direct function of integration time. Peak D* was measured at 8×1010 cm Hz1/2/w at f/1.3 cold shielding
  • Keywords
    II-VI semiconductors; cadmium compounds; electric noise measurement; electron device noise; infrared detectors; mercury compounds; metal-insulator-semiconductor devices; photodetectors; 10 micron; 30 Hz; 50 percent; BLIP performance; HgCdTe; IR detector; MIS photocapacitor detectors; cold shielding; integration time; photon g-r noise; quantum efficiency; responsivity;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Advanced Infrared Detectors and Systems, 1990., Fourth International Conference on
  • Conference_Location
    London
  • Print_ISBN
    0-86341-702-7
  • Type

    conf

  • Filename
    98652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274765