DocumentCode :
274770
Title :
Hybrid CdHgTe-silicon infrared focal plane arrays
Author :
Baker, I.M. ; Crimes, G.J. ; Ard, C.K. ; Jenner, M.D. ; Parsons, J.E. ; Ballingall, R.A. ; Elliot, C.T.
Author_Institution :
Philips Components Ltd., Southampton, UK
fYear :
1990
fDate :
5-7 Jun 1990
Firstpage :
78
Lastpage :
87
Abstract :
Infrared sensitive focal planes consisting of matrices of photovoltaic CdHgTe diodes coupled to silicon multiplexing circuitry have been demonstrated in linear formats up to 1024 elements and in high density, multifunctional, two-dimensional arrays of up to 128×128 elements. The authors describe the technology used, in particular with respect to the radiometric performance achieved in hybrid arrays and to aspects such as manufacturability and reliability
Keywords :
II-VI semiconductors; cadmium compounds; elemental semiconductors; hybrid integrated circuits; image sensors; infrared detectors; integrated circuit technology; mercury compounds; photovoltaic cells; semiconductor technology; silicon; 1024 pixels; 128 pixels; 16384 pixels; CdHgTe-Si; IC technology; II-VI semiconductors; hybrid arrays; infrared focal plane arrays; manufacturability; multiplexing circuitry; photovoltaic CdHgTe diodes; radiometric performance; reliability; two-dimensional arrays;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Advanced Infrared Detectors and Systems, 1990., Fourth International Conference on
Conference_Location :
London
Print_ISBN :
0-86341-702-7
Type :
conf
Filename :
98657
Link To Document :
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