Title :
Thin AlAsSb avalanche regions with sub-mV/K temperature coefficients of breakdown voltage and very low excess noise factors
Author :
Tan, Chee Hing ; Xie, Shiyu ; Xie, Jingjing
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
AlAsSb avalanche regions of less than 100nm thick exhibit temperature coefficients of breakdown voltage of 0.95 mV/K and excess noise corresponding to effective ionization coefficient ratio of keff~0.1 to 0.15.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; avalanche breakdown; avalanche photodiodes; AlAsSb; breakdown voltage; thin avalanche region; Absorption; Current measurement; Indium gallium arsenide; Indium phosphide; Noise; Temperature measurement;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110534
