• DocumentCode
    2747972
  • Title

    Thin AlAsSb avalanche regions with sub-mV/K temperature coefficients of breakdown voltage and very low excess noise factors

  • Author

    Tan, Chee Hing ; Xie, Shiyu ; Xie, Jingjing

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    278
  • Lastpage
    279
  • Abstract
    AlAsSb avalanche regions of less than 100nm thick exhibit temperature coefficients of breakdown voltage of 0.95 mV/K and excess noise corresponding to effective ionization coefficient ratio of keff~0.1 to 0.15.
  • Keywords
    III-V semiconductors; aluminium compounds; arsenic compounds; avalanche breakdown; avalanche photodiodes; AlAsSb; breakdown voltage; thin avalanche region; Absorption; Current measurement; Indium gallium arsenide; Indium phosphide; Noise; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110534
  • Filename
    6110534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2747972