DocumentCode
2748188
Title
DLTS and hall effect measurement of GaAs solid phase epitaxy technology for cost effective laser applications
Author
F. Sepehry-Fard
Author_Institution
F. S. F. Research Technologies Inc.
fYear
1994
fDate
29 Aug-2 Sep 1994
Firstpage
285
Lastpage
286
Keywords
Atom optics; Costs; Epitaxial growth; Gallium arsenide; Hall effect; Helium; Hydrogen; Laser applications; Magnetic moments; Phase measurement; Solid lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 1994., Proceedings of 5th European
Print_ISBN
0-7803-1791-2
Type
conf
DOI
10.1109/EQEC.1994.698523
Filename
698523
Link To Document