• DocumentCode
    2748550
  • Title

    Real-time feedback control of reactive ion etching using neural networks

  • Author

    Kim, T. ; Stokes, D. ; May, G.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    4
  • fYear
    1996
  • fDate
    3-6 Jun 1996
  • Firstpage
    2039
  • Abstract
    Consistent demands on semiconductor manufacturers to produce circuits with increased density and complexity have made stringent process control an issue of growing importance in the industry. Recent work has shown that neural networks offer great promise in modeling complex fabrication processes such as reactive ion etching (RIE). Motivated by these results, this paper explores the use of neural networks for real-time, model-based feedback control of RIE. This objective is accomplished in part by constructing a predictive model for the system, which can be inverted (or approximately inverted) to achieve the desired control. The efficacy of this approach is demonstrated using experimental data from an actual RIE process to examine real-time control of critical process responses such as etch rate, uniformity, selectivity, and anisotropy
  • Keywords
    adaptive control; feedback; neural nets; process control; sputter etching; anisotropy; complex fabrication processes; critical process responses; etch rate; predictive model; process control; reactive ion etching; real-time model-based feedback control; selectivity; semiconductor manufacturers; uniformity; Circuits; Etching; Fabrication; Feedback control; Industrial control; Manufacturing industries; Manufacturing processes; Neural networks; Process control; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Neural Networks, 1996., IEEE International Conference on
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-3210-5
  • Type

    conf

  • DOI
    10.1109/ICNN.1996.549215
  • Filename
    549215