DocumentCode
2748557
Title
Patterned zinc-diffused structures for improved avalanche probabilities in InGaAs/InP single photon detectors
Author
Cheng, James ; Lo, Yu-Hwa
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
352
Lastpage
353
Abstract
Optimal fabrication of the p-i-n junction in a high performance InGaAs/InP single photon avalanche photodiode is challenging. We present a novel design with patterned Zn-diffusion to greatly improve the detection efficiency and reduce dark count.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical fabrication; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs/InP single photon detectors; avalanche photodiode; avalanche probabilities; optimal fabrication; p-i-n junction; patterned zinc-diffused structures; Detectors; Image edge detection; Indium gallium arsenide; Indium phosphide; Junctions; Photonics; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110572
Filename
6110572
Link To Document