DocumentCode
2748875
Title
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Author
Fu, L. ; Lu, H.F. ; Mokkapati, S. ; Jolley, G. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
387
Lastpage
388
Abstract
We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; plasmonics; self-assembly; semiconductor quantum dots; solar cells; InGaAs-GaAs; InGaAs/GaAs quantum dot solar cells; carrier occupation; physical processes; plasmonic light trapping; plasmonic quantum dot solar cells; recombination; self-assembled quantum dot solar cell; transportation; Charge carrier processes; Gallium arsenide; Nanoparticles; Photovoltaic cells; Physics; Plasmons; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110590
Filename
6110590
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