DocumentCode
2748893
Title
GaAs/AlGaAs quantum hall resistance devices with AuGeNi and in contacts
Author
Zhong, Y. ; Li, J.J. ; Zhong, Q. ; Lu, Y.F. ; Zhao, J.T. ; Wang, X.S.
Author_Institution
Nat. Inst. of Metrol., Beijing, China
fYear
2012
fDate
1-6 July 2012
Firstpage
386
Lastpage
387
Abstract
We present in CPEM 2012 the latest quantum Hall (QH) experimental results of GaAs-AlGaAs Hall devices fabricated by NIM. AuGeNi and In are utilized as the contacts material. Precision measurement indicates quantized Hall devices with low contact resistance and good breakdown current are obtained.
Keywords
Hall effect devices; III-V semiconductors; aluminium compounds; contact resistance; electric breakdown; electrical contacts; gallium arsenide; germanium alloys; gold alloys; indium; nickel alloys; AuGeNi; CPEM 2012; GaAs-AlGaAs; In; NIM; QH resistance device; breakdown current; contact material; contact resistance; precision measurement; quantum Hall resistance device; Contact resistance; Current measurement; Electrical resistance measurement; Gallium arsenide; Resistance; Standards; Voltage measurement; AuGeNi contact; Indium contact; Quantum hall resistance; ohmic contact; resistance metrology;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location
Washington, DC
ISSN
0589-1485
Print_ISBN
978-1-4673-0439-9
Type
conf
DOI
10.1109/CPEM.2012.6250965
Filename
6250965
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