DocumentCode :
2748907
Title :
Monolithically grown InxGa1−xAs nanowire array on silicon tandem solar cells with high efficiency
Author :
Shin, Jae Cheol ; Kim, Kyou Hyun ; Hu, Hefei ; Yu, Ki Jun ; Rogers, John A. ; Zuo, Jian-Min ; Li, Xiuling
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear :
2011
fDate :
9-13 Oct. 2011
Firstpage :
391
Lastpage :
392
Abstract :
We demonstrate one-dimensional heteroepitaxy of InxGa1-xAs nanowires in the entire composition range on Si (111) substrate for tandem solar cells with efficiencies that exceed the planar Si single junction cell fabricated using identical processes.
Keywords :
III-V semiconductors; elemental semiconductors; epitaxial growth; gallium arsenide; indium compounds; nanowires; semiconductor quantum wires; silicon; solar cells; InxGa1-xAs; Si; Si (111) substrate; monolithically grown nanowire array; one-dimensional heteroepitaxy; planar Si single junction cell; silicon tandem solar cells; Arrays; Indium gallium arsenide; P-n junctions; Photonic band gap; Photovoltaic cells; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
Type :
conf
DOI :
10.1109/PHO.2011.6110592
Filename :
6110592
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2748907
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