• DocumentCode
    27490
  • Title

    3.7 kV Vertical GaN PN Diodes

  • Author

    Kizilyalli, Isik C. ; Edwards, Andrew P. ; Nie, Hui ; Bour, David ; Prunty, Thomas ; Disney, Don

  • Author_Institution
    Avogy Inc., San Jose, CA, USA
  • Volume
    35
  • Issue
    2
  • fYear
    2014
  • fDate
    Feb. 2014
  • Firstpage
    247
  • Lastpage
    249
  • Abstract
    There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (104 cm-2) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (Rsp) of 2.95 mΩ-cm2.
  • Keywords
    MOCVD; avalanche breakdown; gallium compounds; power semiconductor diodes; semiconductor device measurement; semiconductor growth; wide band gap semiconductors; GaN; MOCVD; area differential specific on resistance; breakdown voltages; bulk substrates; low defect density; power electronics application; vertical GaN PN diodes; voltage 3.7 kV; wide band gap semiconductor devices; Gallium nitride; Schottky diodes; Silicon; Silicon carbide; Substrates; Gallium nitride; avalanche breakdown; power diodes; power-semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2294175
  • Filename
    6684571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=27490