Title :
Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study
Author :
Borsosfoldi, Z. ; Webster, D.R. ; Thayne, I.G. ; Asenov, A. ; Haigh, D.G. ; Beaumont, S.P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
In this paper, we apply numerical device simulation in the design of pseudomorphic HEMTs with improved linearity and reduced intermodulation products aimed at wireless communications applications. We show that in channel doped GaAs pHEMTs the introduction of a p-doped buffer layer significantly improves the device linearity leading to a 10 dB suppression of 3rd order distortion over a wide bias range with similar gain when compared with a more standard δ-doped GaAs pHEMT device
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; high electron mobility transistors; intermodulation distortion; radio equipment; semiconductor device models; δ-doped GaAs pHEMT; GaAs; channel doped GaAs pHEMT; device linearity; distortion; gain; intermodulation product; numerical simulation; p-doped buffer layer; pseudomorphic HEMT; wireless communication; Consumer electronics; Doping; Gallium arsenide; Intermodulation distortion; Linearity; Medical simulation; Nanoelectronics; Numerical simulation; PHEMTs; Wireless communication;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711718
