Metal semi-conductor shottky barrier diodes

This is a review presentation on metal-semiconductor Schottky barriers and devices. Three main areas will be dealt with in some detail: (a) the characteristics and underlying physics of barriers as currently understood, (b) the state of the art of barrier and device fabrication technologies, and (c) device applications, capabilities and limitations, present and future. The following specific topics will be discussed: 1. Barrier heights and their relations to work functions, electron affinities, electronegativity, and surface states. 2. Barrier characteristics: capacity-voltage including contributions of majority and minority carriers; current-voltage and underlying mechanisms; noise characteristics. 3. High frequency and high current density capabilities and limitations. 4. Status of fabrication technologies and device reliability. 5. Device applications: microwave detection and mixing, switching and limiting, optical and higher energy particle detection.