DocumentCode
2749500
Title
Deep-levels in silicon waveguides: A route to monolithic integration
Author
Knights, A.P. ; Logan, D.F. ; Jessop, P.E. ; De La Rue, R.M. ; Velha, P. ; Sorel, M.
Author_Institution
Dept. of Eng. Phys., McMaster Univ., Hamilton, ON, Canada
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
461
Lastpage
462
Abstract
This summary describes the development of silicon waveguide photodetectors formed via the controlled introduction of deep-levels to induce sensitivity at wavelengths around 1550nm. This approach is monolithic and CMOS compatible.
Keywords
integrated optics; optical waveguides; photodetectors; silicon; CMOS compatibility; monolithic integration; silicon waveguide photodetectors; wavelength 1550 nm; Optical device fabrication; Optical modulation; Optical sensors; Optical waveguides; Photonics; Silicon; Temperature measurement; interconnects; photodetector; photonics; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110626
Filename
6110626
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