Title :
The comparison of electric field intensity effects to the bean sprouts growing
Author :
Kiatgamjorn, P. ; Khan-ngern, Werachet ; Nitta, S.
Author_Institution :
Fac. of Eng., King Mongkut´s Inst. of Technol., Bangkok, Thailand
Abstract :
The electric field intensity is varied at 10, 20, 25 kV/m. This paper is focused on the height of stems and the length of roots. The effect of electric field intensity is evaluated on bean sprout growing. The electric field intensity is analyzed by the finite element method. Experimental results indicate that the bean sprout in high electric field intensity has a better growth in comparison with that of low electric field based on statistical analysis.
Keywords :
agriculture; biological effects of fields; crops; electric field effects; finite element analysis; bean sprout growing; electric field intensity effects; finite element method; root length; statistical analysis; stem height; Electric fields; Electric variables measurement; Electrodes; Equations; Finite element methods; Length measurement; Measurement standards; Plastics; Statistical analysis; Statistics;
Conference_Titel :
Environmental Electromagnetics, 2003. CEEM 2003. Proceedings. Asia-Pacific Conference on
Conference_Location :
Hangzhou, China
Print_ISBN :
7-5635-0802-3
DOI :
10.1109/CEEM.2003.238651
