EMI comparison between Si and SiC technology in a boost converter

Author

Bogónez-Franco, Paco ; Sendra, Josep Balcells

Author_Institution

Electron. Eng. Dept., Univ. Politec. de Catalunya, Terrassa, Spain

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

In this paper we present a comparison of the EMI generated by a dc-dc boost converter, using silicon (Si) or silicon-carbide (SiC) diodes and/or MOSFET. EMI was compared using Si technology as reference. The comparison parameters were the switching times, and the conducted and radiated EMI. The paper shows that the use of SiC diode has great influence on the radiated EMI. The use of SiC MOSFET combined with Si diode reduces the radiated and conducted EMI generated by the converter.

Keywords

DC-DC power convertors; MOSFET; electromagnetic interference; elemental semiconductors; semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; Si; Si technology; SiC; SiC MOSFET; SiC technology; conducted EMI; dc-dc boost converter; radiated EMI; silicon diodes; silicon-carbide diodes; switching times; Electromagnetic interference; MOSFET circuits; Semiconductor diodes; Silicon; Silicon carbide; Switches; Transistors; Boost converter; carbide; conducted EMI; radiated EMI; silicon; silicon carbide (SiC);

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC EUROPE), 2012 International Symposium on

Conference_Location

Rome

ISSN

2325-0356

Print_ISBN

978-1-4673-0718-5

Type

conf

DOI

10.1109/EMCEurope.2012.6396739

Filename

6396739