Title :
EMI comparison between Si and SiC technology in a boost converter
Author :
Bogónez-Franco, Paco ; Sendra, Josep Balcells
Author_Institution :
Electron. Eng. Dept., Univ. Politec. de Catalunya, Terrassa, Spain
Abstract :
In this paper we present a comparison of the EMI generated by a dc-dc boost converter, using silicon (Si) or silicon-carbide (SiC) diodes and/or MOSFET. EMI was compared using Si technology as reference. The comparison parameters were the switching times, and the conducted and radiated EMI. The paper shows that the use of SiC diode has great influence on the radiated EMI. The use of SiC MOSFET combined with Si diode reduces the radiated and conducted EMI generated by the converter.
Keywords :
DC-DC power convertors; MOSFET; electromagnetic interference; elemental semiconductors; semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; Si; Si technology; SiC; SiC MOSFET; SiC technology; conducted EMI; dc-dc boost converter; radiated EMI; silicon diodes; silicon-carbide diodes; switching times; Electromagnetic interference; MOSFET circuits; Semiconductor diodes; Silicon; Silicon carbide; Switches; Transistors; Boost converter; carbide; conducted EMI; radiated EMI; silicon; silicon carbide (SiC);
Conference_Titel :
Electromagnetic Compatibility (EMC EUROPE), 2012 International Symposium on
Conference_Location :
Rome
Print_ISBN :
978-1-4673-0718-5
DOI :
10.1109/EMCEurope.2012.6396739
