Title :
A novel high-performance WSi-gate self-aligned N-AlGaAs/InGaAs/N-AlGaAs pseudomorphic double heterojunction MODFET by ion implantation
Author :
Nishii, K. ; Nishitsuji, M. ; Uda, T. ; Yokoyama, T. ; Yamamoto, S. ; Kunihisa, T. ; Tamura, A.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A novel high performance WSi-gate self-aligned N-AlGaAs/InGaAs/N-AlGaAs pseudomorphic double heterojunction MODFET was fabricated by ion implantation into the epitaxial layers. To obtain high activation for the Si implanted epitaxial layers, we have optimized the layer structure, especially AlGaAs thickness, and annealing conditions using a graphite heater. The 0.8 μm-gate DH-MODFET exhibited a K-value of 400 mS/Vmm, gmMAX of 450 mS/mm and IMAX of 300 mA/mm with Vth of -0.05 V. The standard deviation of Vth was 18.1 mV across a 3 inch wafer. Operated with drain bias of 3.0 V, the DH-MODFET demonstrated 28% power added efficiency (PAE) with -56.4 dBc adjacent channel leakage power ratio (ACPR) at Pout=21.5 dBm and 600 kHz off center frequency from 1.9 GHz
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; high electron mobility transistors; indium compounds; ion implantation; semiconductor epitaxial layers; AlGaAs-InGaAs-AlGaAs; WSi; annealing; channel leakage power ratio; drain bias; epitaxial layers; high performance WSi-gate self-aligned transistor; ion implantation; power added efficiency; pseudomorphic double heterojunction MODFET; Epitaxial layers; Gallium arsenide; HEMTs; Heterojunctions; Indium gallium arsenide; Ion implantation; MMICs; MODFETs; Rapid thermal annealing; Temperature dependence;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711721
