Title :
Quasi-phasematched semiconductors for Mid-IR frequency conversion
Author :
Schunemann, Peter G.
Author_Institution :
BAE Syst., Inc., Nashua, NH, USA
Abstract :
All-epitaxial quasi-phasematched semiconductors represent a new paradigm for mid-IR frequency conversion. Orientation-patterned GaAs (OPGaAs) devices pumped at 2 microns are powerful and efficient down-converters, and new bulk devices based on OPGaP and OPGaN are being developed for pumping at shorter wavelengths.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; optical frequency conversion; optical phase matching; optical pumping; wide band gap semiconductors; GaAs; GaN; GaP; all-epitaxial quasiphasematched semiconductors; bulk devices; midIR frequency conversion; optical pumping; orientation-patterned devices; Gallium arsenide; Gratings; Molecular beam epitaxial growth; Optical fiber devices;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110644
