DocumentCode
2749861
Title
Physics of novel III-nitride gain media for visible and ultraviolet lasers
Author
Tansu, Nelson ; Zhang, Jing ; Zhao, Hongping
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
509
Lastpage
510
Abstract
The limitations and novel designs of InGaN and AlGaN quantum wells for visible and ultraviolet lasers are investigated. Specific designs with large optical gain are compared for visible and ultraviolet lasers.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical materials; quantum well lasers; wide band gap semiconductors; AlGaN; III-nitride gain media; InGaN; large optical gain design; quantum well; ultraviolet laser; visible laser; Aluminum gallium nitride; Diode lasers; Gallium nitride; Laser theory; Optical polarization; Semiconductor lasers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110645
Filename
6110645
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