Title :
Physics of novel III-nitride gain media for visible and ultraviolet lasers
Author :
Tansu, Nelson ; Zhang, Jing ; Zhao, Hongping
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The limitations and novel designs of InGaN and AlGaN quantum wells for visible and ultraviolet lasers are investigated. Specific designs with large optical gain are compared for visible and ultraviolet lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical materials; quantum well lasers; wide band gap semiconductors; AlGaN; III-nitride gain media; InGaN; large optical gain design; quantum well; ultraviolet laser; visible laser; Aluminum gallium nitride; Diode lasers; Gallium nitride; Laser theory; Optical polarization; Semiconductor lasers; Stimulated emission;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110645
