Breakdown of the quantum Hall effect in graphene

Author

Janssen, T.J.B.M. ; Tzalenchuk, A. ; Baker, A.M.R. ; Alexander-Webber, J.A. ; Nicholas, R.J. ; Yakimova, R. ; Lara-Avila, S. ; Kubatkin, S. ; Kopylov, Sergey ; Fal´ko, V.I.

Author_Institution

Nat. Phys. Lab., Teddington, UK

fYear

2012

fDate

1-6 July 2012

Firstpage

510

Lastpage

511

Abstract

We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.

Keywords

carrier density; electric breakdown; electric resistance measurement; graphene; quantum Hall effect; silicon compounds; wide band gap semiconductors; C; SiC; bench top-turnkey quantum resistance standard; carrier density dependent breakdown current; epitaxial graphene; metrologically accurate quantum Hall resistance measurements; quantum Hall effect breakdown; Charge carrier density; Electric breakdown; Electrical resistance measurement; Epitaxial growth; Hall effect; Resistance; Temperature measurement; Graphene; precision measurement; quantum Hall effect; resistance standard;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2012 Conference on

Conference_Location

Washington, DC

ISSN

0589-1485

Print_ISBN

978-1-4673-0439-9

Type

conf

DOI

10.1109/CPEM.2012.6251027

Filename

6251027