Title :
Breakdown of the quantum Hall effect in graphene
Author :
Janssen, T.J.B.M. ; Tzalenchuk, A. ; Baker, A.M.R. ; Alexander-Webber, J.A. ; Nicholas, R.J. ; Yakimova, R. ; Lara-Avila, S. ; Kubatkin, S. ; Kopylov, Sergey ; Fal´ko, V.I.
Author_Institution :
Nat. Phys. Lab., Teddington, UK
Abstract :
We present experimental details on the carrier density dependent breakdown current in epitaxial graphene grown on SiC. We show that in this system even at very low carrier densities and moderate temperatures it is still possible to have a breakdown current large enough for metrologically accurate quantum Hall resistance measurements. This work paves the way for a simple bench top/turnkey quantum resistance standard.
Keywords :
carrier density; electric breakdown; electric resistance measurement; graphene; quantum Hall effect; silicon compounds; wide band gap semiconductors; C; SiC; bench top-turnkey quantum resistance standard; carrier density dependent breakdown current; epitaxial graphene; metrologically accurate quantum Hall resistance measurements; quantum Hall effect breakdown; Charge carrier density; Electric breakdown; Electrical resistance measurement; Epitaxial growth; Hall effect; Resistance; Temperature measurement; Graphene; precision measurement; quantum Hall effect; resistance standard;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4673-0439-9
DOI :
10.1109/CPEM.2012.6251027
