DocumentCode :
2750039
Title :
Characteristics of graphene for quantized hall effect measurements
Author :
Elmquist, Randolph E. ; Shen, Tian ; Real, Mariano ; Calizo, Irene G. ; Bush, Brian G. ; He, Guowei ; Yang, Yanfei ; Klimov, Nikolai ; Newell, David B. ; Hight-Walker, Angela R. ; Feenstra, Randall M.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
2012
fDate :
1-6 July 2012
Firstpage :
514
Lastpage :
515
Abstract :
This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced by three common processing methods and discuss the conditions necessary for well-developed resistance plateaus to be observed. Methods used to determine the graphene layer thickness are presented. The metrologically relevant characteristics of graphene are correlated with electrical transport measurements in strong magnetic fields.
Keywords :
Hall effect devices; electric resistance measurement; graphene; measurement standards; electrical transport measurement; graphene based quantized Hall effect device; graphene characteristic; quantized Hall effect measurements; resistance standard; strong magnetic fiel; Educational institutions; Hall effect; Laboratories; Resistance; Scanning electron microscopy; Standards; Substrates; Electrical resistance measurements; graphene; material properties; measurement standards; quantum Hall effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
ISSN :
0589-1485
Print_ISBN :
978-1-4673-0439-9
Type :
conf
DOI :
10.1109/CPEM.2012.6251029
Filename :
6251029
Link To Document :
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