Title :
Native graphene oxides at graphene edges
Author :
Shimamoto, S. ; Naitou, Y. ; Fukuyama, Y. ; Kiryu, S. ; Kaneko, N.
Author_Institution :
Nat. Metrol. Ins titute of Japan (NMIJ), AIST, Tsukuba, Japan
Abstract :
The boundary between graphene flake and SiO2/Si substrate have been probed by scanning capacitance microscopy. Distinctive dot-like protrusions standing on the graphene edges have been observed, and the density of protrusions increases with the increase of graphene layer numbers. Spectroscopic analysis has revealed that the carrier densities at these protrusions are lower than those of the graphene. In addition, the size of the protrusions is decreased by annealing under reductive gas atmosphere.
Keywords :
Raman spectra; annealing; carrier density; elemental semiconductors; graphene; scanning probe microscopy; silicon; silicon compounds; C-SiO2-Si; Raman spectroscopy; SiO2-Si; annealing; carrier densities; distinctive dot-like protrusions; graphene edges; graphene flake; native graphene oxides; protrusion density; reductive gas atmosphere; scanning capacitance microscopy; spectroscopic analysis; Annealing; Capacitance; Electrodes; Microscopy; Probes; Raman scattering; Substrates; graphene; quantum Hall resistance standard; scanning capacitance microscopy (SCM);
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4673-0439-9
DOI :
10.1109/CPEM.2012.6251031
