Native graphene oxides at graphene edges

Author

Shimamoto, S. ; Naitou, Y. ; Fukuyama, Y. ; Kiryu, S. ; Kaneko, N.

Author_Institution

Nat. Metrol. Ins titute of Japan (NMIJ), AIST, Tsukuba, Japan

fYear

2012

fDate

1-6 July 2012

Firstpage

518

Lastpage

519

Abstract

The boundary between graphene flake and SiO₂/Si substrate have been probed by scanning capacitance microscopy. Distinctive dot-like protrusions standing on the graphene edges have been observed, and the density of protrusions increases with the increase of graphene layer numbers. Spectroscopic analysis has revealed that the carrier densities at these protrusions are lower than those of the graphene. In addition, the size of the protrusions is decreased by annealing under reductive gas atmosphere.

Keywords

Raman spectra; annealing; carrier density; elemental semiconductors; graphene; scanning probe microscopy; silicon; silicon compounds; C-SiO₂-Si; Raman spectroscopy; SiO₂-Si; annealing; carrier densities; distinctive dot-like protrusions; graphene edges; graphene flake; native graphene oxides; protrusion density; reductive gas atmosphere; scanning capacitance microscopy; spectroscopic analysis; Annealing; Capacitance; Electrodes; Microscopy; Probes; Raman scattering; Substrates; graphene; quantum Hall resistance standard; scanning capacitance microscopy (SCM);

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2012 Conference on

Conference_Location

Washington, DC

ISSN

0589-1485

Print_ISBN

978-1-4673-0439-9

Type

conf

DOI

10.1109/CPEM.2012.6251031

Filename

6251031