• DocumentCode
    2750152
  • Title

    Influence of backside doping on the nonlinear capacitances of a PHEMT affecting the VCO frequency characteristics

  • Author

    Brech, H. ; Grave, T. ; Werthof, A. ; Siweris, H.J. ; Simlinger, T. ; Selberherr, S.

  • Author_Institution
    Corp. Technol., Siemens AG, Munich, Germany
  • fYear
    1997
  • fDate
    8-11 Sep 1997
  • Firstpage
    495
  • Lastpage
    498
  • Abstract
    A local maximum in the CGS(VGS) characteristics of an AlGaAs/InGaAs/AlGaAs PHEMT is both calculated by hydrodynamic simulations and extracted from S-parameter measurements. It is found by simulation that the doping on the backside of the channel is the origin of this behavior. VCO measurements demonstrated that this C GS(VGS) characteristic can result in a partially reversed tuning behavior
  • Keywords
    III-V semiconductors; S-parameters; aluminium compounds; capacitance; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; AlGaAs-InGaAs-GaAs; PHEMT; S-parameter; VCO frequency characteristics; backside doping; hydrodynamic simulations; nonlinear capacitance; partially reversed tuning; Capacitance; Circuit simulation; Doping; Frequency; HEMTs; Hydrodynamics; Indium gallium arsenide; MODFETs; PHEMTs; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 1997 IEEE International Symposium on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7503-0556-8
  • Type

    conf

  • DOI
    10.1109/ISCS.1998.711723
  • Filename
    711723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2750152