Title :
ZnO for homojunction light emitting diodes and transparent conductors
Author_Institution :
Dept. of Appl. Phys., Tianjin Univ., Tianjin, China
Abstract :
ZnO has a bandgap of 3.4 eV and exciton binding energy of about 60 meV, which makes it an interesting UV emitting material with great potential. It is also a very promising transparent conducting oxide to be used as the alternative of indium tin oxide (ITO). ITO may retreat from transparent conducting oxide in the long run due to the scarcity of In.
Keywords :
II-VI semiconductors; conductors (electric); indium compounds; light emitting diodes; zinc compounds; InSnO; ZnO; electron volt energy 3.4 eV; electron volt energy 60 eV; exciton binding energy; homojunction light emitting diodes; transparent conducting oxide; transparent conductors; Educational institutions; Films; Indium tin oxide; Ion implantation; Light emitting diodes; Sun; Zinc oxide;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110667
