Title :
Transparent oxide semiconductors: Recent material developments and new applications
Author :
Herman, G.S. ; Rajachidambaram, J.S. ; Rajachidambaram, M.S. ; Han, S. -Y ; Chang, C. -H ; Murali, S. ; Conley, J.F., Jr.
Author_Institution :
Sch. of Chem., Biol. & Environ. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
Amorphous oxide semiconductors have been studied primarily as the active semiconducting material for thin film transistors for active matrix display and transparent/flexible electronic applications. Recent results on printed amorphous oxide semiconductors for thin film transistors, the role of surface functionalization, and the integration of these materials for resistive random access memory applications will be described.
Keywords :
amorphous semiconductors; thin film transistors; transparency; active matrix display; active semiconducting material; amorphous oxide semiconductors; material developments; resistive random access memory applications; thin film transistors; transparent oxide semiconductors; Logic gates; Materials; Physics; Thin film transistors; Tin; Zinc; RRAM; TFT; amorphous oxide semiconductor; surface functionalization;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110668
