• DocumentCode
    2750293
  • Title

    The effects of annealing process under H2/N2 environment on the characteristics of low temperature solution processed InGaZnO thin film transistors

  • Author

    Im, Hwarim ; Noh, Jeong A. ; Jang, Jongsu ; Hong, Yongtaek

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    559
  • Lastpage
    560
  • Abstract
    We demonstrated solution processed InGaZnO (IGZO) TFTs annealed at low temperature under H2/N2 environment and investigated the effects of annealing process under H2/N2 environment on the characteristics of low temperature solution processed InGaZnO TFTs.
  • Keywords
    III-V semiconductors; annealing; gallium compounds; indium compounds; thin film transistors; zinc compounds; H2/N2 environment; InGaZnO; annealing process; low temperature solution; thin film transistors; Annealing; Films; Flexible electronics; Substrates; Temperature; Thin film transistors; Threshold voltage; H2 annealing; Thin film transistors; low temperature; solution processed InGaZnO;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110670
  • Filename
    6110670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2750293