DocumentCode :
2750330
Title :
Fabrication and characterization of single Nb/NbxSi1−x/Nb Josephson junction for voltage standard
Author :
Cao, Wenhui ; Li, Jinjin ; Zhong, Qing ; Guo, Xiaowei ; He, Qing
Author_Institution :
Nat. Inst. of Metrol., Beijing, China
fYear :
2012
fDate :
1-6 July 2012
Firstpage :
550
Lastpage :
551
Abstract :
We report in CPEM 2012 our effort towards SNS Josephson junction devices for the quantum voltage standard. A single-junction SNS device, with Nb as the superconductor material (S) and NbxSi1-x alloy as the barrier material (N), is fabricated and tested for the first time by NIM (National Institute of Metrology). A I-V characteristic curve of the junction is measured and the experimental results are discussed in this paper.
Keywords :
measurement standards; niobium; niobium alloys; silicon alloys; superconducting junction devices; superconducting materials; voltage measurement; CPEM 2012; I-V characteristic curve; NIM; National Institute of Metrology; Nb-NbxSi1-x-Nb; barrier material; junction measurement; quantum voltage standard; single-junction SNS Josephson junction device; superconductor material; voltage standard; Josephson junctions; Junctions; Niobium; Silicon; Standards; Josephson junctions; NbxSi1−x; Niobium; voltage standard;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
ISSN :
0589-1485
Print_ISBN :
978-1-4673-0439-9
Type :
conf
DOI :
10.1109/CPEM.2012.6251047
Filename :
6251047
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2750330
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