• DocumentCode
    2750330
  • Title

    Fabrication and characterization of single Nb/NbxSi1−x/Nb Josephson junction for voltage standard

  • Author

    Cao, Wenhui ; Li, Jinjin ; Zhong, Qing ; Guo, Xiaowei ; He, Qing

  • Author_Institution
    Nat. Inst. of Metrol., Beijing, China
  • fYear
    2012
  • fDate
    1-6 July 2012
  • Firstpage
    550
  • Lastpage
    551
  • Abstract
    We report in CPEM 2012 our effort towards SNS Josephson junction devices for the quantum voltage standard. A single-junction SNS device, with Nb as the superconductor material (S) and NbxSi1-x alloy as the barrier material (N), is fabricated and tested for the first time by NIM (National Institute of Metrology). A I-V characteristic curve of the junction is measured and the experimental results are discussed in this paper.
  • Keywords
    measurement standards; niobium; niobium alloys; silicon alloys; superconducting junction devices; superconducting materials; voltage measurement; CPEM 2012; I-V characteristic curve; NIM; National Institute of Metrology; Nb-NbxSi1-x-Nb; barrier material; junction measurement; quantum voltage standard; single-junction SNS Josephson junction device; superconductor material; voltage standard; Josephson junctions; Junctions; Niobium; Silicon; Standards; Josephson junctions; NbxSi1−x; Niobium; voltage standard;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM), 2012 Conference on
  • Conference_Location
    Washington, DC
  • ISSN
    0589-1485
  • Print_ISBN
    978-1-4673-0439-9
  • Type

    conf

  • DOI
    10.1109/CPEM.2012.6251047
  • Filename
    6251047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2750330