Photoinduced instability in microwave excited GaAs MESFETs

Author

Lan, E.Y. ; Huang, J.H. ; Blaugh, J. ; Schirmann, E.

Author_Institution

Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

499

Lastpage

502

Abstract

A photoinduced low frequency oscillation (LFO) is observed in GaAs MESFETs under microwave excitation at room temperature. The phenomenon is a self-sustained externally driven output power amplitude modulation and occurs within a range of light intensity, microwave power excitation level, and quiescent bias state. The oscillation frequency depends on the light intensity and microwave power, varying from 0.1 to 100 Hz. This oscillation phenomenon is found to be a strong function of device surface condition

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; 0.1 to 100 Hz; 293 K; GaAs; device surface condition; light intensity; low frequency oscillation; microwave excited GaAs MESFETs; microwave power; oscillation frequency; photoinduced instability; quiescent bias state; self-sustained externally driven output power amplitude modulation; Electromagnetic heating; Frequency; Gallium arsenide; Laboratories; MESFETs; Microwave communication; Microwave devices; Photonic band gap; Power generation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711724

Filename

711724