Material preparation and fabrication of graphene-based quantum hall resistance devices

Author

Wang, Xueshen ; Li, Jinjin ; Zhong, Yuan ; Zhong, Qing ; Cao, Wenhui

Author_Institution

Nat. Inst. of Metrol., Beijing, China

fYear

2012

fDate

1-6 July 2012

Firstpage

598

Lastpage

599

Abstract

We report in CPEM 2012 the preparation of the micromechanical cleavage (MC) and the chemical vapor deposition (CVD) graphene films and the fabrication of the quantum Hall resistance (QHR) devices on these films. Graphene films are on the SiO₂/Si substrates. Spectroscopic Raman analysis indicates monolayer graphene films are obtained. Hall bar structures are formed on graphene films by e-beam lithography, metallization, and oxygen plasma etching.

Keywords

Raman spectra; chemical vapour deposition; electron beam lithography; graphene; metallisation; microfabrication; micromechanical devices; monolayers; quantum Hall effect; sputter etching; thin films; C; CPEM; CVD graphene films; Hall bar structures; MC preparation; SiO₂-Si; chemical vapor deposition graphene films; e-beam lithography; graphene-based quantum Hall resistance device fabrication; graphene-based quantum Hall resistance device material preparation; micromechanical cleavage preparation; monolayer graphene films; oxygen plasma etching; spectroscopic Raman analysis; Fabrication; Films; Lithography; Plasmas; Resistance; Silicon; Substrates; Graphene; Quantum Hall Resistance Devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2012 Conference on

Conference_Location

Washington, DC

ISSN

0589-1485

Print_ISBN

978-1-4673-0439-9

Type

conf

DOI

10.1109/CPEM.2012.6251071

Filename

6251071